Chemical Vapor Deposition (CVD) is a process whereby a solid film is synthesized from the gas phase by a chemical reaction on a substrate. CVD is used to prepare materials in thicknesses from ultrathin films to bulk solids. These materials are used in a wide range of applications from wear resistant coatings to semiconducting films in ultra large scale integrated electronic devices. CVD uses chemically reacting flows and is therefore a complex method. The lecture presents the fundamentals of CVD using selected examples of materials and their properties. Topics: 1. Introduction 1.1. History 1.2. Materials, reactions, precursors 1.3. Film Formation 1.4. CVD Process: transport, reaction and growth 2. Silicon 2.1. Growth and transport in Low Pressure CVD 2.2. Crystallinity 2.3. In situ doping 2.4. Rapid thermal CVD, Low Temperature CVD - Epitaxy 3. Diamond CVD 3.1. Conventional synthesis of diamond 3.2. Diamond formation in the metastable part of the phase diagram 3.3. Synthesis methods 3.4. Plasma CVD 3.5. Mechanism of diamond formation 4. Copper Metal CVD 4.1. Problems in ULSI 4.2. Copper precursors 4.3. Film formation mechanisms 4.4. Selective CVD 4.5. Laser CVD 5. MOCVD of electroceramic materials 5.1. MOCVD of Pb(Ti,Zr)O3 5.2. Precursor delivery, precursor materials 5.3. Mass flow generation and control - pumping systems 6. MOVPE of III/V Semiconductors 6.1. GaN (MOCVD) 6.2. GaAs (CBE, MOMBE, MBE) 6.3. UHV technology |
